MPS2222A vishay semiconductors formerly general semiconductor document number 88231 www.vishay.com 10-may-02 1 new product small signal transistor (npn) features ?npn silicon epitaxial planar transistor for switching and amplifier applications. ?on special request, this transistor is also manufactured in the pin configuration to-18. ?this transistor is also available in the sot-23 case with the type designation mmbt2222a. mechanical data case: to-92 plastic package weight: approx. 0.18g packaging codes/options: e6/bulk 5k per container, 20k/box e7/4k per ammo mag., 20k/box maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol value unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current i c 600 ma power dissipation t a = 25 c p tot 625 mw derate above 25 c 5.0 mw/ c power dissipation t c = 25 c p tot 1.5 w derate above 25 c 12 mw/ c thermal resistance junction to ambient air r ja 200 c/w thermal resistance junction to case r jc 83.3 c/w junction temperature t j 150 c storage temperature range t s 55 to +150 c 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) 0.098 (2.5) max. ? 0.022 (0.55) bottom view to-226aa (to-92) dimensions in inches and (millimeters)
MPS2222A vishay semiconductors formerly general semiconductor www.vishay.com document number 88231 2 10-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit v ce = 10 v, i c = 0.1 ma 35 v ce = 10 v, i c = 1 ma 50 v ce = 10 v, i c = 10 ma 75 dc current gain h fe v ce = 10 v, i c = 10 ma 35 t a = -55 c v ce = 10 v, i c = 150 ma (1) 100 300 v ce = 1.0 v, i c = 150 ma (1) 50 v ce = 10 v, i c = 500 ma (1) 40 collector-base breakdown voltage v (br)cbo i c = 10 a, i e = 0 75 v collector-emitter breakdown voltage (1) v (br)ceo i c = 10 ma, i b = 0 40 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c = 0 6.0 v collector-emitter saturation voltage (1) v cesat i c = 150 ma, i b = 15 ma 0.3 v i c = 500 ma, i b = 50 ma 1.0 base-emitter saturation voltage (1) v besat i c = 150 ma, i b = 15 ma 0.6 1.2 v i c = 500 ma, i b = 50 ma 2.0 collector cut-off current i cev v eb = 3 v, v ce = 60 v 10 na collector cut-off current i cbo v cb = 60 v, i e = 0 0.01 a v cb = 50v, i e =0,t a = 125 c 10 emitter cut-off current i ebo v eb = 3 v, i c = 0 100 na base cut-off current i bl v ce = 60 v, v eb = 3.0 v 20 na v ce = 10 v, i c = 1 ma, 2.0 8.0 input impedance h ie f = 1 khz k ? v ce = 10 v, i c = 10 ma, 0.25 1.25 f = 1 khz v ce = 10 v, i c = 1 ma, 8 10 -4 voltage feedback ratio h re f = 1 khz v ce = 10 v, i c = 10 ma, 4 10 -4 f = 1 khz current gain-bandwidth product f t v ce = 20 v, i c = 20 ma 300 mhz f = 100 mhz output capacitance c obo v cb = 10 v, f = 1 mhz, i e = 0 8.0 pf input capacitance c ibo v eb = 0.5 v, f = 1 mhz, i c = 0 25 pf note: (1) pulse test: pulse width 300 s, cycle 2%
MPS2222A vishay semiconductors formerly general semiconductor document number 88231 www.vishay.com 10-may-02 3 200 ? +30v -4 v < 2 ns 0 c * < 10 pf s c < 10 pf s * 200 ? 1.0 to 100 s, duty cycle 2% 1.0 to 100 s, duty cycle 2% +30v +16 v -2 v 1k ? 1k ? scope rise time < 4ns *total shunt capacitance of test jig, connectors and oscilloscope < 20 ns 0 +16 v -14 v switching time equivalent test circuit figure 1 - turn-on time figure 2 - turn-off time electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit v ce = 10 v, i c = 1 ma, 5.0 35 output admittance h oe f = 1 khz s v ce = 10 v, i c = 10 ma, 25 200 f = 1 khz v ce = 10 v, i c = 1 ma, 50 300 small signal current gain h fe f = 1 khz v ce = 10 v, i c = 10 ma, 75 375 f = 1 khz collector base time constant r b c c i e = 20 ma, v cb = 20 v, 150 ps f = 31.8 mhz noise figure nf v ce = 10 v, i c = 100 a, 4.0 db r s = 1 k ? , f = 1 khz delay time (see fig. 1) t d i b1 = 15 ma, i c = 150 ma 10 ns v cc = 30 v v be = 0.5 v rise time (see fig. 1) t r i b1 = 15 ma, i c = 150 ma 25 ns v cc = 30 v v be = 0.5 v storage time (see fig. 2) t s i b1 =i b2 = 15 ma, i c = 150 ma 225 ns v cc = 30 v fall time (see fig. 2) t f i b1 = i b2 = 1 ma, i c = 10 ma 60 ns v cc = 30 v
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